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YG831C03R
SCHOTTKY BARRIER DIODE
(30V / 5A TO-22OF15)
Outline Drawings
100.5 o3.2
+0.2 -0.1
4.50.2 2.70.2 6.3
2.70.2 3.70.2
1.20.2 13Min
Features
Low VF Super high speed switching. High reliability by planer design. JEDEC EIAJ
150.3
0.70.2 2.540.2
0.6
+0.2 -0
2.70.2
SC-67
Applications
High speed power switching.
Connection Diagram
2 1 3
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Item Repetitive peak reverse voltage Repetitive peak surge reverse voltage Isolation voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Viso IO IFSM Tj Tstg tw=500ns, duty=1/40 Terminals to Case, AC. 1min. duty=1/2, Tc=130C Square wave Sine wave 10ms Conditions
Rating 30 35 *1 1500 5* 100 +150 -40 to +150
Unit V V V A A C C
Electrical Characteristics (Ta=25C Unless otherwise specified )
Item Forward voltage drop ** Reverse current ** Thermal resistance Symbol VF IR Rth(j-c) Conditions IF=2.0A VR=VRRM Junction to case
* Out put current of centertap full wave connection.
*1 : Tentative Max. 0.45 5.0 5.0 Unit V mA C/W
** Rating per element
Mechanical Characteristics
Mounting torque Weight Recommended torque 0.3 to 0.5 2.3 N*m g
(30V / 5A TO-22OF15)
Characteristics
Forward Characteristic (typ.)
10
2
YG831C03R
Reverse Characteristic (typ.)
Tj=150 C Tj=125 C
o o
(A)
10
Reverse Current (mA)
Forward Current
10
1
Tj=100 C
o
1
Tj=150 oC Tj=125 C o Tj=100 C o Tj=25 C
o
10
0
10
-1
Tj=25 C
o
0.1
IF
IR
0.01 0.0
10
-2
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
10
-3
0
5
10
15
20
25
30
35
VF
Forward Voltage
(V)
VR
Reverse Voltage (V)
(W)
2.0 1.8
Forward Power Dissipation
6.0
Io
Reverse Power Dissipation
(W)
5.5 5.0
VR 360
Forward Power Dissipation
DC
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2
360
Reverse Power Dissipation
4.5
4.0 3.5 3.0 2.5 2.0 1.5 1.0
=180
o
Square wave =60 o Square wave =120 Sine wave =180 o Square wave =180 DC
o
o
WF
Per 1element
0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
PR
0.5 0.0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
Io
Average Forward Current
(A)
VR
Reverse Voltage
(V)
160 155
Current Derating (Io-Tc)
Junction Capacitance Characteristic (typ.)
( C)
Case Temperature
145 140 135 130 125 120 115 110
VR=20V
Junction Capacitance (pF) Cj
150
o
1000
DC Sine wave =180
o o
Square wave =180 Square wave =120
o
100
360 Io
Tc
Square wave =60
o
105 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
10 10 100
Io
Average Output Current
(A)
:Conduction angle of forward current for each rectifier element Io:Output current of center-tap full wave connection
VR
Reverse Voltage
(V)
(30V / 5A TO-22OF15)
YG831C03R
1000
Surge Capability
Peak Half - Wave Current I FSM
(A)
100 10 1 10 100
Number of Cycles at 50Hz
10
2
Transient Thermal Impedance
Transient Thermal Impedance
( C/W)
10
1
o
10
0
10
-1
10
-3
10
-2
10
-1
10
0
10
1
10
2
t
Time
(sec.)
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

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